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Current applied physics : the official journal of ... 51건

  1. [국내논문]   Effect of p-μc-Si1-xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells   SCI SCIE

    Krajangsang, T. (Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan) , Yunaz, I.A. , Miyajima, S. , Konagai, M.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S357 - S360 , 2010 , 1567-1739 ,

    초록

    A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-μc-Si 1-x O x :H influences the hetero-junction μc-Si:H solar cells. We observed that the open-circuit voltage (V oc ) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction μc-Si:H solar cells. From simulation result, it was confirmed that the V oc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction μc-Si:H solar cells. The enhancement of V oc (ΔV oc ) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-μc-Si 1-x O x :H is promising for use as window layer in hetero-junction μc-Si:H solar cells.

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  2. [국내논문]   19th International Photovoltaic Science and Engineering Conference and Exhibition (PVSEC-19)   SCI SCIE

    PVSEC-19 Publication Committee
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S353 , 2010 , 1567-1739 ,

    초록

    A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-μc-Si 1-x O x :H influences the hetero-junction μc-Si:H solar cells. We observed that the open-circuit voltage (V oc ) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction μc-Si:H solar cells. From simulation result, it was confirmed that the V oc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction μc-Si:H solar cells. The enhancement of V oc (ΔV oc ) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-μc-Si 1-x O x :H is promising for use as window layer in hetero-junction μc-Si:H solar cells.

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    회원님의 원문열람 권한에 따라 열람이 불가능 할 수 있으며 권한이 없는 경우 해당 사이트의 정책에 따라 회원가입 및 유료구매가 필요할 수 있습니다.이동하는 사이트에서의 모든 정보이용은 NDSL과 무관합니다.

    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  3. [국내논문]   Editorial Board   SCI SCIE


    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. IFC , 2010 , 1567-1739 ,

    초록

    A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-μc-Si 1-x O x :H influences the hetero-junction μc-Si:H solar cells. We observed that the open-circuit voltage (V oc ) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction μc-Si:H solar cells. From simulation result, it was confirmed that the V oc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction μc-Si:H solar cells. The enhancement of V oc (ΔV oc ) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-μc-Si 1-x O x :H is promising for use as window layer in hetero-junction μc-Si:H solar cells.

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    회원님의 원문열람 권한에 따라 열람이 불가능 할 수 있으며 권한이 없는 경우 해당 사이트의 정책에 따라 회원가입 및 유료구매가 필요할 수 있습니다.이동하는 사이트에서의 모든 정보이용은 NDSL과 무관합니다.

    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  4. [국내논문]   Modeling of single phase inverter of photovoltaic system using Hammerstein-Wiener nonlinear system identification   SCI SCIE

    Patcharaprakiti, N. (King Mongkut's University of Technology Thonburi, School of Energy Environment and Material, 126 Phachautit Road, Bangmod ThungKru, Bangkok 10140, Thailand) , Kirtikara, K. , Monyakul, V. , Chenvidhya, D. , Thongpron, J. , Sangswang, A. , Muenpinij, B.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S532 - S536 , 2010 , 1567-1739 ,

    초록

    This paper proposes a new method to modeling a power inverter of grid-connected photovoltaic system by using a nonlinear system identification technique based on the Hammerstein-Weiner model. In this method, the system is considered as a black box of which it is not necessary to know structures and parameters inside. A nonlinear system identification, which is composed of nonlinear blocks and linear blocks, has been processed and synthesized yielding the modeling from only measured inputs and outputs of the system. An inverter of a grid-connected photovoltaic system has been tested and its model determined. Results on modeling the voltage, current and power waveforms have accuracies of 98.13%, 95.02% and 91.05% respectively. The mathematical model being the representation of the system can be analyzed and provide characteristics on controllability, stability, power quality, power flow.

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  5. [국내논문]   Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4-NH3-N2 pulsed plasma   SCI SCIE

    Kwon, S. (Department of Electronic Engineering, Sejong University, 98, Kunja-Dong, Kwangjin-Ku, Seoul 143-747, Republic of Korea) , Lee, H. , Kim, B.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S369 - S371 , 2010 , 1567-1739 ,

    초록

    Using a pulsed-plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited at room temperature in SiH 4 -NH 3 -N 2 plasma. The impact of radio frequency bias power and duty ratio on a refractive index is detailed by using an ion energy analysis system. A decrease in the duty ratio resulted in a decrease in the refractive index at all powers but 60W. As duty ratio is varied at lower powers, the refractive index strongly depended on E h /E l . Another strong, but negative correlation was noted at high powers. An increase in the bias power in the range of 60-100W led to a decrease in the refractive index at all duty ratios. For the variations in the bias power, no correlation was observed. For all the variations in the power and duty ratio, the refractive index varied from 1.60 to 2.21. Very high refractive index could be achieved by controlling duty ratio at 60W. A neural network model was constructed using the experimental data. The model demonstrated a R 2 of 86.4%. It was used not only to investigate the effect of the diagnostic variables, but to optimize the refractive index.

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  6. [국내논문]   Effects of thermal annealing on the efficiency of bulk-heterojunction organic photovoltaic devices   SCI SCIE

    Jeong, J.W. (Display and Nanosystem Lab., College of Engineering, Korea University, Seoul 136-713, Republic of Korea) , Huh, J.W. , Lee, J.I. , Chu, H.Y. , Han, I.K. , Ju, B.K.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S520 - S524 , 2010 , 1567-1739 ,

    초록

    This paper studies the effect of the annealing process on the performance of P3HT/PCBM photovoltaic devices, in terms of their efficiencies. The basic photovoltaic devices are annealed on a hot-plate, at a temperature of 150 o C for 10min in air. For comparison, the thermal annealing of photovoltaic devices is carried out using rapid thermal annealing (RTA) equipment, at a temperature of 150 o C for 10min in different environments such as in vacuum, in nitrogen and in argon, individually. The light conversion efficiency (E ff ) of the resulting photovoltaic devices increases from 2.29% (hot-plate annealing) to 2.77% after annealing in a vacuum environment. As a result, the organic photovoltaic devices, annealed in a vacuum show enhanced efficiencies compared with those annealed in different gas environments.

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    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  7. [국내논문]   Effect of rf-power density on the resistivity of Ga-doped ZnO film deposited by rf-magnetron sputter deposition technique   SCI SCIE

    Kim, J.K. (Thin Film Solar Cell Technology Team, Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea) , Yun, S.J. , Lee, J.M. , Wook Lim, J.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S451 - S454 , 2010 , 1567-1739 ,

    초록

    Gallium-doped zinc oxide (GZO) films were studied using rf-magnetron sputter deposition technique for the use of transparent conducting oxide film. The effects of deposition parameters such as pressure, rf-power, and film thickness on electrical and optical characteristics of GZO films were evaluated to obtain transparent conducting film with high transmittance and low resistivity for a-Si:H thin film solar cells. The resistivity and the structural properties of GZO film strongly depended on rf-power density and film thickness. The 1200nm-thick GZO film deposited at 15 mTorr and 150 o C with rf-power density of 4.46W/cm 2 showed the resistivity as low as 6.2x10 -4 Ωcm and the average transmittance of 86.5% in visible light wavelength region of 400-800nm.

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  8. [국내논문]   Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system   SCI SCIE

    Sim, K.U. (Photonic & Electronic Thin Film Laboratory, Department of Material Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757, Republic of Korea) , Shin, S.W. , Moholkar, A.V. , Yun, J.H. , Moon, J.H. , Kim, J.H.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S463 - S467 , 2010 , 1567-1739 ,

    초록

    The un-doped and Al, Ga, and In doped (3wt.%) ZnO thin films have been prepared on glass substrates using RF magnetron sputtering at 350 o C. The effects of these dopants on the structural, morphological, electrical, and optical properties of deposited films have been studied. XRD study showed that all doped ZnO thin films have the polycrystalline nature with hexagonal wurtzite phase having c-axis preferred out-of-plane orientation. The cross-sectional FE-SEM micrographs showed that all the films have columnar structure. AFM images showed that doped ZnO thin films have better surface smoothness than un-doped ZnO thin films regardless of doping elements. The GZO thin film have the optimal electrical properties among all doped samples in terms of the carrier concentration (6.13x10 23 cm -3 ), charge carrier mobility (28.2cm 2 V -1 s -1 ), and a minimum resistivity (3.61x10 -4 Ωcm). UV-Vis spectrometer results showed that all the films are highly transparent in the visible region and the band gap energy of the films varies from 3.25eV to 3.75eV for the different dopants. PL spectra showed the un-doped and doped ZnO thin film exhibited a violet emission in the 390-405nm range, with different intensities, which is due to difference in concentration of zinc vacancies.

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  9. [국내논문]   Synthesis and characterization of polycrystalline CuInS2 thin films for solar cell devices at low temperature processing conditions   SCI SCIE

    Park, M.S. (School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749, Republic of Korea) , Han, S.Y. , Bae, E.J. , Lee, T.J. , Chang, C.H. , Ryu, S.O.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S379 - S382 , 2010 , 1567-1739 ,

    초록

    Polycrystalline CuInS 2 thin films were deposited on glass substrates using a novel solution-based continuous flow microreactor process for the first time. A series of analysis was performed to characterize the CuInS 2 thin films using UV-visible spectrophotometer, scanning electron microscope, X-ray diffraction spectrometer, and X-ray photoelectron spectroscopy. The estimated optical band gaps of CuInS 2 thin films were in the range of 1.52-1.60eV. The structural and chemical binding information indicated that CuInS 2 thin films with a tetragonal chalcopyrite structure were successfully deposited. Dense film with a thickness around 1μm could be obtained with a 5min deposition time. This study demonstrates the solution-based continuous flow microreactor process is a promising low cost alternative for thin film PV manufacturing.

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  10. [국내논문]   rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications   SCI SCIE

    Dao, V.A. (School of Information and Communication Engineering, Sungkyunkwan University, Republic of Korea) , Choi, H. , Heo, J. , Park, H. , Yoon, K. , Lee, Y. , Kim, Y. , Lakshminarayan, N. , Yi, J.
    Current applied physics : the official journal of the Korean Physical Society v.10 no.3 suppl. ,pp. S506 - S509 , 2010 , 1567-1739 ,

    초록

    Indium tin oxide (ITO) films of low resistivity, high transmittance and good figure of merit were prepared by radio frequency magnetron sputtering, at different substrate temperatures (T s ) under such a high λ/d value and used as anti-reflection layer in heterojunction solar cells. For film deposition in the T s range 150 o C s = o C, XRD shows that coexistence of the and textures. The resistivity and Hall mobility of ITO films were improved due to thermally induced crystallization. However, carrier concentration of these ITO films is sensitive to the T s . We attributed these effects to the Ar + ions bombardment and differing adatom mobility of the heated atoms on the substrate under such a high λ/d value. Those ITO films were used to fabricate single-side heterojunction solar cells. As the T s is increased, the device performance improves and the best photo voltage parameters of the device were found to be V oc =6 640mV, J sc =3 36.90mA/cm 2 , FF=0.71, η=16.3% for T s = 200 o C. The decrease in performance beyond the T s of 200 o C is attributed to hydrogen effusion to the defect in emitter layer. We noted that the figure of merit value of ITO films was reflected in the performance of devices.

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