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Transactions on electrical and electronic material...Transactions on electrical and electronic materials 8건

  1. [국내논문]   Consumable Approaches of Polysilicon MEMS CMP  

    Park, Sung-Min (School of Mechanical Engineering, Pusan National University ) , Jeong, Suk-Hoon (School of Mechanical Engineering, Pusan National University ) , Jeong, Moon-Ki (School of Mechanical Engineering, Pusan National University ) , Park, Boum-Young (School of Mechanical Engineering, Pusan National University ) , Jeong, Hae-Do (School of Mechanical Engineering, Pusan National University ) , Kim, Hyoung-Jae (Department Research & Development, G&P Technology)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 157 - 162 , 2006 , 1229-7607 ,

    초록

    Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$ . And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

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  2. [국내논문]   Dishing and Erosion Evaluations of Tungsten CMP Slurry in the Orbital Polishing System  

    Lee, Sang-Ho (Division of Materials and Chemical Engineering, Hanyang University ) , Kang, Young-Jae (Division of Materials and Chemical Engineering, Hanyang University ) , Park, Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University ) , Kwon, Pan-Ki (CMP division, Doosan DND Co., Ltd. ) , Kim, Chang-Il (CMP division, Doosan DND Co., Ltd. ) , Oh, Chan-Kwon (CMP division, Doosan DND Co., Ltd. ) , Kim, Soo-Myoung (CMP division, Doosan DND Co., Ltd. ) , Jhon, Myung-S. (CMP division, Doosan DND Co., Ltd. ) , Hur, Se-An (Cabot Microelectronics Korea ) , Kim, Young-Jung (Cabot Microelectronics Korea ) , Kim, Bong-Ho (Cabot Microelectronics Korea)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 163 - 166 , 2006 , 1229-7607 ,

    초록

    The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

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  3. [국내논문]   Effect of Particle Size of Ceria Coated Silica and Polishing Pressure on Chemical Mechanical Polishing of Oxide Film  

    Kim, Hwan-Chul (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech. ) , Lim, Hyung-Mi (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech. ) , Kim, Dae-Sung (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech. ) , Lee, Seung-Ho (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech.)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 167 - 172 , 2006 , 1229-7607 ,

    초록

    Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$ , rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

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  4. [국내논문]   A Study on Lateral Distribution of Implanted Ions in Silicon  

    Jung, Won-Chae (Department of Electronic Engineering, Kyonggi University ) , Kim, Hyung-Min (Department of mechanical System Design Engineering, Kyonggi University)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 173 - 179 , 2006 , 1229-7607 ,

    초록

    Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

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  5. [국내논문]   Demonstration of Alternative Fabrication Techniques for Robust MEMS Device  

    Chang, Sung-Pil (Department of Electonic Engineering, Inha University ) , Park, Je-Young (Department of Electonic Engineering, Inha University ) , Cha, Doo-Yeol (Department of Electonic Engineering, Inha University ) , Lee, Heung-Shik (Department of Mechanical Engineering, Inha University)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 184 - 188 , 2006 , 1229-7607 ,

    초록

    This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.

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  6. [국내논문]   Electrical and Dielectric Properties, and Accelerated Aging Characteristics of Lanthania Doped Zinc Oxide Varistors  

    Nahm, Choon-Woo (Department of Electrical Engineering, Dongeui University)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 189 - 195 , 2006 , 1229-7607 ,

    초록

    The microstructure, electrical and dielectric properties, and stability against DC accelerated aging stress of the varistors, which are composed of quaternary system $ZnO-Pr_6O_{11}CoO-Cr_2O_3-based$ ceramics, were investigated for different $La_2O_3$ contents. The increase of $La_2O_3$ content led to more densified ceramics, whereas abruptly decreased the nonlinear properties by incorporating beyond 1.0mol%. The highest nonlinearity was obtained from 0.5mol% $La_2O_3$ , with the nonlinear coefficient of 81.6 and the leakage current of $0.1{\mu}A$ . The varistors doped with 0.5mol% $La_2O_3$ exhibited high stability, in which the variation rates of breakdown voltage, nonlinear coefficient, leakage current, dielectric constant, and dissipation factor were -1.1%, -3.7%, +100%, +1.4%, and +8.2%, respectively, for stressing state of $0.95V_{1mA}/150^{\circ}C/24h$ .

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  7. [국내논문]   The Designing of an Air-gap Type FBAR Filter using Leach Equivalent Model  

    Choi, Hyung-Wook (Department of Electrical and Information Engineering, Kyungwon University ) , Jung, Joong-Yeon (Department of Electrical and Information Engineering, Kyungwon University ) , Lee, Seung-Kyu (Department of Electrical and Information Engineering, Kyungwon University ) , Park, Yong-Seo (Department of Electrical and Information Engineering, Kyungwon University ) , Kim, Kyung-Hwan (Department of Electrical and Information Engineering, Kyungwon University ) , Shin, Hyun-Yong (Department of Electronics and Information Communication Engineering, Namseoul University)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 196 - 203 , 2006 , 1229-7607 ,

    초록

    An air-gap type FBAR was designed using Leach equivalent model for analyzing a vertical structure of the FBAR. For the top electrode, Pt, and the bottom electrode, Au, of $1.2{\mu}m$ thickness and the piezoelectric of 0.8,urn thickness, the resonance and anti-resonance occurred at 2.401 GHz and 2.460 GHz, respectively. $S_{11}$ was increased and $S_{21}$ was decreased as the resonance area of FBAR was widened. We observed the characteristics of insertion loss, bandwidth and out-of-band rejection of ladder-type FBAR BPF by changing resonance areas of series and shunt resonators and by adding stages. As the resonance area of series resonator was increased, insertion loss was improved but out-of-band rejection was degraded. And as the resonance area of shunt resonator was increased, insertion loss was degraded a little but out-of-band rejection was improved even without adding stages. We, also, changed the shape of the resonance area from square shape to rectangle shape to examine the effects of the resonator shape on the characteristics of the BPF. The best performances were observed when the sizes of series and shunt resonator are $150{\mu}m{\times}l50{\mu}m\;and\;5{\mu}m{\times}50{\mu}m$ , respectively. Out-of-band rejection was improved about 10dB and bandwidth was broadened from 30MHz to 100MHz utilizing inductor tuning on $2{\times}2\;and\; 4{\times}2$ ladder-type BPFs.

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  8. [국내논문]   SF6 and O2 Effects on PR Ashing in N2 Atmospheric Dielectric Barrier Discharge  

    Jeong, Soo-Yeon (Department of Nuclear Engineering, Seoul National University ) , Kim, Ji-Hun (Department of Nuclear Engineering, Seoul National University ) , Hwang, Yong-Seuk (Department of Nuclear Engineering, Seoul National University ) , Kim, Gon-Ho (Department of Nuclear Engineering, Seoul National University)
    Transactions on electrical and electronic materials v.7 no.4 ,pp. 204 - 209 , 2006 , 1229-7607 ,

    초록

    Photo Resist (PR) ashing process was carried out with the atmospheric pressure- dielectric barrier discharge (ADBD) using $SF_6/N_2/O_2$ . Ashing rate (AR) was sensitive to the mixing ratio of the oxygen and nitrogen of the blower type of ADBD asher. The maximum AR of 5000 A/min was achieved at 2% of oxygen in the $N_2$ plasma. With increasing the oxygen concentration to more than 2% in the $N_2$ plasma, the discharge becomes weak due to the high electron affinity of oxygen, resulting in the decrease of AR. When adding 0.5% of SF6 to $O_2/N_2$ mixed plasma, the PR AR increased drastically to 9000 A/min and the ashed surface of PR was smoother compared to the processed surface without $SF_6$ . Carbon Fluorinated polymer may passivate the PR surface. It was also observed that the glass surface was not damaged by the fluorine.

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