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Journal of semiconductor technology and science 11건

  1. [국내논문]   Editorial  

    Kukjin Chun
    Journal of semiconductor technology and science v.7 no.3 ,pp. 131 - 131 , 2007 , 1598-1657 ,

    초록

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    회원님의 원문열람 권한에 따라 열람이 불가능 할 수 있으며 권한이 없는 경우 해당 사이트의 정책에 따라 회원가입 및 유료구매가 필요할 수 있습니다.이동하는 사이트에서의 모든 정보이용은 NDSL과 무관합니다.

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  2. [국내논문]   MEMS for Heterogeneous Integration of Devices and Functionality  

    Fujita, Hiroyuki (Center for International Research on MicroMechatoronics (CIRMM), Institute of Industrial Science, The University of Tokyo)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 133 - 139 , 2007 , 1598-1657 ,

    초록

    Future MEMS systems will be composed of larger varieties of devices with very different functionality such as electronics, mechanics, optics and bio-chemistry. Integration technology of heterogeneous devices must be developed. This article first deals with the current development trend of new fabrication technologies; those include self-assembling of parts over a large area, wafer-scale encapsulation by wafer-bonding, nano imprinting, and roll-to-roll printing. In the latter half of the article, the concept towards the heterogeneous integration of devices and functionality into micro/nano systems is described. The key idea is to combine the conventional top-down technologies and the novel bottom-up technologies for building nano systems. A simple example is the carbon nano tube interconnection that is grown in the via-hole of a VLSI chip. In the laboratory level, the position-specific self-assembly of nano parts on a DNA template was demonstrated through hybridization of probe DNA segments attached to the parts. Also, bio molecular motors were incorporated in a micro fluidic system and utilized as a nano actuator for transporting objects in the channel.

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  3. [국내논문]   Separation of Human Breast Cancer and Epithelial Cells by Adhesion Difference in a Microfluidic Channel  

    Kwon, Keon-Woo (School of Mechanical and Aerospace Engineering, Seoul National University ) , Choi, Sung-Sik (School of Life Sciences and Biotechnology, Korea University ) , Kim, Byung-Kyu (School of Aerospace and Mechanical Engineering, Hankuk Aviation University ) , Lee, Se-Na (School of Life Sciences and Biotechnology, Korea University ) , Lee, Sang-Ho (School of Life Sciences and Biotechnology, Korea University ) , Park, Min-Cheol (School of Mechanical and Aerospace Engineering, Seoul National University ) , Kim, Pil-Nam (School of Mechanical and Aerospace Engineering, Seoul National University ) , Park, Suk-Ho (Microsystem Research Center, Korea Institute of Science and Technology ) , Kim, Young-Ho (School of Aerospace and Mechanical Engineering, Hankuk Aviation University ) , Park, Jun-Gyul (Microsystem Research Center, Korea Institute of Science and Technology ) , Suh, Kahp-Y. (School of Mechanical and Aerospace Engineering, Seoul National University)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 140 - 150 , 2007 , 1598-1657 ,

    초록

    A simple, label-free microfluidic cell purification method is presented for separation of cancer cells by exploiting difference in cell adhesion. To maximize the adhesion difference, three types of polymeric nanostructures (50nm pillars, 50nm perpendicular and 50nm parallel lines with respect to the direction of flow) were fabricated using UV-assisted capillary moulding and included inside a polydimethylsiloxane (PDMS) microfluidic channel bonded onto glass substrate. The adhesion force of human breast epithelial cells (MCF10A) and human breast carcinoma (MCF7) was measured independently by injecting each cell line into the microfluidic device followed by culture for a period of time (e.g., one, two, and three hours). Then, the cells bound to the floor of a microfluidic channel were detached by increasing the flow rate of medium in a stepwise fashion. It was found that the adhesion force of MCF10A was always higher than that of MCF cells regardless of culture time and surface nanotopography at all flow rates, resulting in a label-free detection and separation of cancer cells. For the cell types used in our study, the optimum separation was found for 2 hours culture on 50nm parallel line pattern followed by flow-induced detachment at a flow rate of $300{\mu}l/min$ .

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  4. [국내논문]   Quantitative Label-free Biodetection of Acute Disease Related Proteins Based on Nanomechanical Dynamic Microcantilevers  

    Hwang, Kyo-Seon (Nano-Bio Research Center, Korea Institute of Science and Technology ) , Cha, Byung-Hak (Nano-Bio Research Center, Korea Institute of Science and Technology ) , Kim, Sang-Kyung (Nano-Bio Research Center, Korea Institute of Science and Technology ) , Park, Jung-Ho (Department of Electronics and Computer Engineering, Korea University ) , Kim, Tae-Song (Nano-Bio Research Center, Korea Institute of Science and Technology)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 151 - 160 , 2007 , 1598-1657 ,

    초록

    We report the label-free biomolecules detection based on nanomechanical micro cantilevers operated in dynamic mode for detection of two marker proteins (myoglobin and creatin kinase-MB (CK-MB)) of acute myocardical infarctions. When the specific binding between the antigen and its antibody occurred on the fuctionalized microcantilever surface, mechanical response (i.e. resonant frequency) of microcantilevers was changed in lower frequency range. We performed the label-free biomolecules detection of myoglobin and CK-MB antigen in the low concentration (clinical threshold concentration range) as much as 1 ng/ml from measuring the dynamic response change of micro cantilevers caused by the intermolecular force. Moreover, we estimate the surface stress on the dynamic microcantilevers generated by specific antibody-antigen binding. It is suggested that our dynamic microcantilevers may enable one to use the sensitive label-free biomolecules detection for application to the disease diagnosis system based on mechanical immuno-sensor.

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    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  5. [국내논문]   Characterization of Nanopores on Micropillars Pt Electrodes for Non-Enzymatic Electrochemical Sensor Applications   피인용횟수: 1

    Park, Dae-Joon (Department of Electronic Engineering, Kwangwoon University ) , Lee, Yi-Jae (Department of Electronic Engineering, Kwangwoon University ) , Park, Jae-Yeong (Department of Electronic Engineering, Kwangwoon University)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 161 - 165 , 2007 , 1598-1657 ,

    초록

    In this paper, mesoporous Pt on micro pillars Pt electrode is newly designed, fabricated, and characterized on silicon substrate for non-enzymatic electrochemical sensor micro-chip integrated with CMOS readout circuitry. The fabricated micro/nano Pt electrode has cylindrical hexangular arrayed nano Pt pores with a diameter of 3.2 nm which is formed on top of the micro pillars Pt electrode with approximately $6{\mu}m$ in diameter, $6{\mu}m$ in space, and $50{\mu}m$ in height. The measured current responses of the fabricated plane Pt, mesoporous Pt, and mesoporous Pt on the micro pillar Pt electrodes are approximately $9.9nA/mm^2,\;6.72{\mu}A/mm^2,\;and\;7.67{\mu}A/mm^2$ in 10mM glucose solution with 0.1M phosphate buffered saline (PBS) solution, respectively. In addition, the measured current responses of the fabricated plane Pt, mesoporous Pt, and mesoporous Pt on the micro pillar Pt electrodes are approximately $0.15{\mu}A/mm^2,\;0.56{\mu}A/mm^2,\;and\;0.74{\mu}A/mm^2$ in 0.1mM ascorbic acid (AA) solution with 0.1M phosphate buffered saline (PBS) solution, respectively. This experimental results show that the proposed micro/nano Pt electrode is highly sensitive and promising for CMOS integrated non-enzymatic electrochemical sensor applications. Since the micro-pillar Pt electrode can also be utilized with a micro-fluidic mixer in the sensor chip, the sensor chip can be much smaller, cheaper, and easier to be fabricated.

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    회원님의 원문열람 권한에 따라 열람이 불가능 할 수 있으며 권한이 없는 경우 해당 사이트의 정책에 따라 회원가입 및 유료구매가 필요할 수 있습니다.이동하는 사이트에서의 모든 정보이용은 NDSL과 무관합니다.

    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  6. [국내논문]   RF MEMS Switches and Integrated Switching Circuits   피인용횟수: 1

    Liu, A.Q. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue ) , Yu, A.B. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue ) , Karim, M.F. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue ) , Tang, M. (School of Electrical & Electronic Engineering, Nanyang Technological University Nanyang Avenue)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 166 - 176 , 2007 , 1598-1657 ,

    초록

    Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

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    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  7. [국내논문]   See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb  

    Kang, Sung-Chan (School of Electrical Engineering and Computer Sciences Seoul National University ) , Moon, Sung-Soo (School of Electrical Engineering and Computer Sciences Seoul National University ) , Kim, Hyeon-Cheol (School of Electrical Engineering and Computer Sciences Seoul National University ) , Chun, Kuk-Jin (School of Electrical Engineering and Computer Sciences Seoul National University)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 177 - 182 , 2007 , 1598-1657 ,

    초록

    This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

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    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  8. [국내논문]   Advances in MEMS Based Planar VOA   피인용횟수: 1

    Lee, Cheng-Kuo (Department of Electrical & Computer Engineering, National University of Singapore ) , Huang, RueyShing (Department of Electrical Engineering, National Tsing-Hua University)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 183 - 195 , 2007 , 1598-1657 ,

    초록

    MEMS technology is proven to be an enabling technology to realize many components for optical networking applications. Due to its widespread applications, VOA has been one of the most attractive MEMS based key devices in optical communication market. Micromachined shutters and refractive mirrors on top of silicon substrate or on the device layer of SOI (Silicon-on-insulator) substrate are the approaches trapped tremendous research activities, because such approaches enable easier alignment and assembly works. These groups of devices are known as the planar VOAs, or two-dimensional (2-D) VOAs. In this review article, we conduct the comprehensively literature survey with respect to MEMS based planar VOA devices. Apparently MEMS VOA technology is still evolving into a mature technology. MEMS VOA technology is not only the cornerstone to support the future optical communication technology, but the best example for understanding the evolution of optical MEMS technology.

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    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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  9. [국내논문]   Optically Controlled Silicon MESFET Modeling Considering Diffusion Process   피인용횟수: 1

    Chattopadhyay, S.N. (Department of Electrical and Computer Engineering, Califormia State University ) , Motoyama, N. (Department of Electrical and Computer Engineering, Califormia State University ) , Rudra, A. (Department of Electrical and Computer Engineering, Califormia State University ) , Sharma, A. (Department of Electrical and Computer Engineering, Califormia State University ) , Sriram, S. (Department of Electrical and Computer Engineering, Califormia State University ) , Overton, C.B. (Department of Electrical and Computer Engineering, Califormia State University ) , Pandey, P. (Department of Electrical and Computer Engineering, Califormia State University)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 196 - 208 , 2007 , 1598-1657 ,

    초록

    An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$ . Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

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  10. [국내논문]   Compact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device   피인용횟수: 1

    Abebe, H. (University of Southern Califormia Information Science Institute, MOSIS service ) , Morris, H. (San Jose State University ) , Cumberbatch, E. (Claremont Graduate University ) , Tyree, V. (University of Southern Califormia Information Science Institute, MOSIS service)
    Journal of semiconductor technology and science v.7 no.3 ,pp. 209 - 213 , 2007 , 1598-1657 ,

    초록

    The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and silicon sides, and includes the polysilicon (poly) gate depletion effect. Our compact gate capacitance model exhibits an excellent fit with measured data and parameter values extracted from data are physically acceptable. The data are collected from 0.5, 0.35, 0.25 and $0.18{\mu}m$ CMOS technologies.

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    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니담기를 통하여 원문복사서비스 이용이 가능합니다.

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