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ACS applied materials & interfaces 92건

  1. [해외논문]   Molybdenum-Doped PdPt@Pt Core–Shell Octahedra Supported by Ionic Block Copolymer-Functionalized Graphene as a Highly Active and Durable Oxygen Reduction Electrocatalyst   SCI SCIE

    Cho, Kie Yong (Department of Materials Science and Engineering, Korea University, Seoul 02841, ) , Yeom, Yong Sik (Department of Materials Science and Engineering, Korea University, Seoul 02841, ) , Seo, Heun Young (Department of Materials Science and Engineering, Korea University, Seoul 02841, ) , Kumar, Pradip (Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, ) , Lee, Albert S. (Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, ) , Baek, Kyung-Youl (Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, ) , Yoon, Ho Gyu (Department of Materials Science and Engineering, Korea University, Seoul 02841,)
    ACS applied materials & interfaces v.9 no.2 ,pp. 1524 - 1535 , 2017 , 1944-8244 ,

    초록

    Development of highly active and durable electrocatalysts that can effectively electrocatalyze oxygen reduction reactions (ORR) still remains one important challenge for high-performance electrochemical conversion and storage applications such as fuel cells and metal-air batteries. Herein, we propose the combination of molybdenum-doped PdPt@Pt core-shell octahedra and the pyrene-functionalized poly(dimethylaminoethyl methacrylate)-b-poly[(ethylene glycol) methyl ether methacrylate] ionic block copolymer-functionalized reduced graphene, oxide (Mo-PdPt@Pt/IG) to effectively augment the interfacial cohesion of both components using a tunable ex situ mixing strategy. The rationally designed Mo-PdPt@Pt core shell octahedra have unique compositional benefits, including segregation of Mo atoms on the vertexes and edges of the octahedron and 2-3 shell layers of Pt atoms on a PdPt alloy core, which can provide highly active sites to the catalyst for ORR. along with enhanced electrochemical stability. In addition, the ionic block copolymer functionalized graphene can facilitate intermolecular charge transfer and. good stability of metal NPs, which arises from the ionic block copolymer interfacial layer. When the beneficial features of the Mo-PdPt@Pt and IG are combined, the Mo-PdPt@Pt/IG exhibits substantially enhanced activity and durability for ORR. relative to those of commercial Pt/C. Notably, the Mo-PdPt@Pt/IG shows mass activity 31-fold higher than that of Pt/C and substantially maintains high activities after 10 000 cycles of intensive durability testing. The current study highlights the crucial strategies in designing the highly active and durable Pt-based octahedra and effective combination with functional graphene supports toward the synergetic effects on ORR.

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  2. [해외논문]   Mechanism of Capacity Fade in Sodium Storage and the Strategies of Improvement for FeS2 Anode   SCI SCIE

    Chen, Kongyao , Zhang, Wuxing , Xue, Lihong , Chen, Weilun , Xiang, Xinghua , Wan, Min , Huang, Yunhui
    ACS applied materials & interfaces v.9 no.2 ,pp. 1536 - 1541 , 2017 , 1944-8244 ,

    초록

    Pyrite FeS 2 has attracted extensive interest as anode material for sodium-ion batteries due to its high capacity, low cost, and abundant resource. However, the micron-sized FeS 2 usually suffers from poor cyclability, which stems from structure collapse, exfoliation of active materials, and sulfur dissolution. Here, we use a synergistic approach to enhance the sodium storage performance of the micron-sized FeS 2 through voltage control (0.5–3 V), binder choice, and graphene coating. The FeS 2 electrode with the synergistic approach exhibits high specific capacity (524 mA h g –1 ), long cycle life (87.8% capacity retention after 800 cycles), and excellent rate capability (323 mA h g –1 at 5 A g –1 ). The results prove that a synergistic approach can be applied in the micron-sized sulfides to achieve high electrochemical performance. Graphic Abstract ACS Electronic Supporting Info

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  3. [해외논문]   Gallium-Doped Li7La3Zr2O12 Garnet-Type Electrolytes with High Lithium-Ion Conductivity   SCI SCIE

    Wu, Jian-Fang (School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ) , Chen, En-Yi (School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ) , Yu, Yao (School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ) , Liu, Lin (School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ) , Wu, Yue (School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ) , Pang, Wei Kong (Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232, ) , Peterson, Vanessa K. (Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232, ) , Guo, Xin (School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074,)
    ACS applied materials & interfaces v.9 no.2 ,pp. 1542 - 1552 , 2017 , 1944-8244 ,

    초록

    Owing to their high conductivity, crystalline Li 7–3 x Ga x La 3 Zr 2 O 12 garnets are promising electrolytes for all-solid-state lithium-ion batteries. Herein, the influence of Ga doping on the phase, lithium-ion distribution, and conductivity of Li 7–3 x Ga x La 3 Zr 2 O 12 garnets is investigated, with the determined concentration and mobility of lithium ions shedding light on the origin of the high conductivity of Li 7–3 x Ga x La 3 Zr 2 O 12 . When the Ga concentration exceeds 0.20 Ga per formula unit, the garnet-type material is found to assume a cubic structure, but lower Ga concentrations result in the coexistence of cubic and tetragonal phases. Most lithium within Li 7–3 x Ga x La 3 Zr 2 O 12 is found to reside at the octahedral 96 h site, away from the central octahedral 48 g site, while the remaining lithium resides at the tetrahedral 24 d site. Such kind of lithium distribution leads to high lithium-ion mobility, which is the origin of the high conductivity; the highest lithium-ion conductivity of 1.46 mS/cm at 25 °C is found to be achieved for Li 7–3 x Ga x La 3 Zr 2 O 12 at x = 0.25. Additionally, there are two lithium-ion migration pathways in the Li 7–3 x Ga x La 3 Zr 2 O 12 garnets: 96 h -96 h and 24 d -96 h -24 d , but the lithium ions transporting through the 96 h -96 h pathway determine the overall conductivity. Graphic Abstract

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  4. [해외논문]   Three-Dimensional Carbon Nanotubes Forest/Carbon Cloth as an Efficient Electrode for Lithium–Polysulfide Batteries   SCI SCIE

    Wu, Xiong-Wei (College of Science, National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanica, College of Agronomy, Hunan Agricultural University, Changsha 410128, ) , Xie, Hao (College of Science, National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanica, College of Agronomy, Hunan Agricultural University, Changsha 410128, ) , Deng, Qi (College of Science, National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanica, College of Agronomy, Hunan Agricultural University, Changsha 410128, ) , Wang, Hui-Xian (College of Science, National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanica, College of Agronomy, Hunan Agricultural University, Changsha 410128, ) , Sheng, Hang (College of Science, National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanica, College of Agronomy, Hunan Agricultural University, Changsha 410128, ) , Yin, Ya-Xia (CAS K) , Zhou, Wen-Xin , Li, Rui-Lian , Guo, Yu-Guo
    ACS applied materials & interfaces v.9 no.2 ,pp. 1553 - 1561 , 2017 , 1944-8244 ,

    초록

    The development of a three-dimensionally flexible, large-surface area, high-conductivity electrode is important to improve the low conductivity and utilization of active materials and restrict the shuttle of long-chain polysulfides in Li–polysulfide batteries. Herein, we constructed an integrated three-dimensional carbon nanotube forest/carbon cloth electrode with heteroatom doping and high electrical conductivity. The as-constructed electrode provides strong trapping on the polysulfide species and fast charge transfer. Therefore, the Li–polysulfide batteries with as-constructed electrodes achieved high specific capacities of ∼1200 and ∼800 mA h g –1 at 0.1 and 1 C, respectively. After 300 cycles at 0.5 C, a specific capacity of 623 mA h g –1 was retained. Graphic Abstract ACS Electronic Supporting Info

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  5. [해외논문]   High-Performance Field-Emission Properties of Boron Nitride Nanotube Field Emitters   SCI SCIE

    Yun, Ki Nam (School of Electrical Engineering, Korea University, Seoul 136-713, ) , Sun, Yuning (School of Electrical Engineering, Korea University, Seoul 136-713, ) , Han, Jun Soo (School of Electrical Engineering, Korea University, Seoul 136-713, ) , Song, Yoon-Ho (Nano Electron-Source Creative Research Center, Creative & Challenging Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, ) , Lee, Cheol Jin (School of Electrical Engineering, Korea University, Seoul 136-713,)
    ACS applied materials & interfaces v.9 no.2 ,pp. 1562 - 1568 , 2017 , 1944-8244 ,

    초록

    Boron nitride nanotubes (BNNTs) have attracted considerable attention as a field emission material because of their high mechanical strength, high negative electron affinity, and high oxidation resistance. Nevertheless, the obtained field-emission properties of BNNTs have indicated poor emission performance, which is a very high turn-on electric field with a low emission current. We fabricated BNNT field emitters and investigated their field-emission properties. The field-emission properties of the BNNT field emitters were considerably enhanced compared to those of other BN nanomaterial-based field emitters. The turn-on and the threshold electric fields of the BNNT field emitter were 3.1 and 5.4 V/mu m at the gap distance of 750 mu m, respectively. Both the turn-on and the threshold electric fields of the BNNT field emitters were decreased by increasing the gap distance between the emitter tip and the anode electrode. Degradation of the emission current during field emission operation for 20 h showed no significant difference according to the gap distance. Emission current fluctuation of the BNNT field emitters showed that the smaller gap was more unstable than the larger gap. The enhanced emission properties are mainly attributed to the small diameter, high-quality, and straight structure of BNNTs as well as the stable network formation of the BNNT film with good mechanical and electrical contact between the BNNTs and the cathode electrode. The remarkable emission performance of the BNNT field emitters might have promising applications for various field-emission devices.

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  6. [해외논문]   Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region   SCI SCIE

    Xie, Chao , Yan, Feng
    ACS applied materials & interfaces v.9 no.2 ,pp. 1569 - 1576 , 2017 , 1944-8244 ,

    초록

    Organometal halide perovskite materials have attracted much attention recently for their excellent optoelectronic properties. Here, we report an ultrasensitive phototransistor based on the multiheterojunction of CH 3 NH 3 PbI 3– x Cl x perovskite/poly(3-hexylthiophene)/graphene for the first time. Since the photoexcited electrons and holes are effectively separated by the poly(3-hexylthiophene) layer, high-density electrons are trapped in the perovskite layer, leading to a strong photogating effect on the underlying graphene channel. The phototransistor demonstrates an unprecedented ultrahigh responsivity of ∼4.3 × 10 9 A/W and a gain approaching 10 10 electrons per photon, respectively. More importantly, the device is sensitive in a broadband wavelength region from ultraviolet to near-infrared, which has not yet been achieved with other perovskite photodetectors. It is expected that the novel perovskite phototransistor will find promising applications as photodetection and imaging devices in the future. Graphic Abstract ACS Electronic Supporting Info

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  7. [해외논문]   Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates   SCI SCIE

    Breckenfeld, Eric (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ) , Kim, Heungsoo (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ) , Burgess, Katherine (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ) , Charipar, Nicholas (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ) , Cheng, Shu-Fan (Nova Research, Inc., 1900 Elkin Street, Suite 230, Alexandria, Virginia 22308, ) , Stroud, Rhonda (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ) , Piqué (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375,) , , Alberto
    ACS applied materials & interfaces v.9 no.2 ,pp. 1577 - 1584 , 2017 , 1944-8244 ,

    초록

    Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor–metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority. Graphic Abstract ACS Electronic Supporting Info

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  8. [해외논문]   Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories   SCI SCIE

    Younis, Adnan (School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, ) , Chu, Dewei (School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, ) , Shah, Abdul Hadi (Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784 Pohang, ) , Du, Haiwei (School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, ) , Li, Sean (School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052,)
    ACS applied materials & interfaces v.9 no.2 ,pp. 1585 - 1592 , 2017 , 1944-8244 ,

    초록

    As an alternative to transistor-based flash memories, redox reactions mediated resistive switches are considered as the most promising next-generation nonvolatile memories that combine the advantages of a simple metal/solid electrolyte (insulator)/metal structure, high scalability, low power consumption, and fast processing. For cation-based memories, the unavailability of in-built mobile cations in many solid electrolytes/insulators (e.g., Ta2O5, SiO2, etc.) instigates the essential role of absorbed water in films to keep electroneutrality for redox reactions at counter electrodes. Herein, we demonstrate electrochemical characteristics (oxidation/reduction reactions) of active electrodes (Ag and Cu) at the electrode/electrolyte interface and their subsequent ions transportation in Fe3O4 film by means of cyclic voltammetry measurements. By posing positive potentials on Ag/Cu active electrodes, Ag preferentially oxidized to Ag+, while Cu prefers to oxidize into Cu2+ first, followed by Cu/Cu+ oxidation. By sweeping the reverse potential, the oxidized ions can be subsequently reduced at the counter electrode. The results presented here provide a detailed understanding of the resistive switching phenomenon in Fe3O4-based memory cells. The results were further discussed on the basis of electrochemically assisted cations diffusions in the presence of absorbed surface water molecules in the film.

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  9. [해외논문]   Remarkable Conductive Anisotropy of Metallic Microcoil/PDMS Composites Made by Electric Field Induced Alignment   SCI SCIE

    Li, Xinghao (School of Mechanical Engineering and Automation, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ) , Cai, Jun (School of Mechanical Engineering and Automation, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ) , Shi, Yingying (School of Mechanical Engineering and Automation, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ) , Yue, Yue (School of Mechanical Engineering and Automation, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ) , Zhang, Deyuan (School of Mechanical Engineering and Automation, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191,)
    ACS applied materials & interfaces v.9 no.2 ,pp. 1593 - 1601 , 2017 , 1944-8244 ,

    초록

    We successfully fabricated a highly anisotropic electrical conductive microcoil/polydimethylsiloxane (PDMS) composite based on helical Spirulina -templated metallic particles using an electric field-induced alignment method. The optimized AC electric field (2 kV/cm, 1 kHz) could efficiently assemble the lightweight conductive microcoils into continuous long chains and form unique end-to-end physical contacts between adjacent particles in the alignment direction, leading to highly conductive channels. Furthermore, the electrical conductivity in the alignment direction reached up to ∼10 S/m for 1 wt % loading and exhibited almost 7–8 orders of magnitude higher than that in perpendicular directions, which is by far the most remarkable conductive anisotropy for anisotropic conductive composites (ACCs). In addition, the anisotropic composites exhibit excellent current-carrying capability in a functional light emitting diode (LED) circuit. Therefore, due to the superior conductive anisotropy and high conductivity, the composites have promising potential in high reliability electrical interconnections and subminiature integrated circuits. Graphic Abstract ACS Electronic Supporting Info

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  10. [해외논문]   Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition   SCI SCIE

    Yi, Qinghua (College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ) , Wu, Jiang (Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, ) , Zhao, Jie (College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ) , Wang, Hao (College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ) , Hu, Jiapeng (College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ) , Dai, Xiao (College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, ) , Zou, Guifu (College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technolo)
    ACS applied materials & interfaces v.9 no.2 ,pp. 1602 - 1608 , 2017 , 1944-8244 ,

    초록

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p -type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05–1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm –3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices. Graphic Abstract ACS Electronic Supporting Info

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